Id 11 a feature new revolutionary high voltage technology ultra low gate charge periodic avalanche rated extreme dvdt rated high peak current capability improved transconductance pgto262 pgto220fp pgto220 marking 11n65c3 11n65c3. Download fairchild semiconductor 2n60b pdf datasheet file. The insulatedgate fieldeffect transistor igfet, also known as the metal oxide field effect transistor mosfet, is a derivative of the field effect. K absolute maximum ratings tc 25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 12 a drain current continuous id 12 a pulsed note 2 idm 48 a avalanche energy. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical. Piv volts 65 90 90 45 25 30 100 100 75 40 25 40 30. Fcp11n60fcpf11n60 tm fcp11n60fcpf11n60 general description superfettm is a new generation of high voltage mosfets from fairchild with outstanding low onresistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. Aa absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 2. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching.
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Toshiba field effect transistor silicon n channel mos type. Ssp2n60bsss2n60b ssp2n60bsss2n60b 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Spp11n65c3,spa11n65c3 spi11n65c3 cool mos power transistor v. Ixys reserves the right to change limits, test conditions, and dimensions. Spp11n60c3 11n60c3 to220 transistor from infineon ebay. About 23% of these are transistors, 18% are integrated circuits, and 1% are other electronic components.
Mouser electronics uses cookies and similar technologies to help deliver the best experience on our site. Our cookies are necessary for the operation of the website, monitoring site performance and to deliver relevant content. Spp11n60c3 mosfet nch 650v 11a to220ab infineon technologies datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Fmr11n90e fuji power mosfet super fape3 series nchannel silicon power mosfet features outline drawings mm equivalent circuit schematic maintains both low power loss and low noise to3pf lower r on characteristic ds more controllable switching dvdt by gate resistance draind smaller v ringing waveform during switching gs. Pricing and availability on millions of electronic components from digikey electronics. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Germanium diodes 1 cold bonded germanium diodes in do7 package mm type aa1 aa117 aa118 aa119 aa8 aa143 aa144 aaz15 aaz17 aaz18 oa47 oa79 oa90 oa91 oa95 oa99 1n34a 1n38a 1n60a 1n100a 1n27q 1n276 1n277 1n695 1n695a 1n933 1n949 1n3287 1n3592 1n3666 1n3773 peak inverse voltage min. Triacs bt9 series thermal resistances symbol parameter conditions min. May 19, 2016 15n60c3 datasheet 650v, mos power transistor infineon, spp15n60c3 datasheet, 15n60c3 pdf, 15n60c3 pinout, 15n60c3 manual, 15n60c3 schematic. Spp11n65c3,spa11n65c3 spi11n65c3 cool mos power transistor v ds 650 v rdson 0. A wide variety of transistor 2n60c options are available to you, such as triode transistor, fieldeffect transistor, and tetrode transistor.